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| FDP090N10 N-Channel PowerTrench(R) MOSFET January 2008 FDP090N10 100V, 75A, 9m Features N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET is producedusing Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. (R) tm * RDS(on) = 7.2m ( Typ.) @ VGS = 10V, ID = 75A * Fast switching speed * Low gate charge * High performance trench technology for extremely low RDS(on) * High power and current handling capability * RoHS compliant Application * DC to DC convertors / Synchronous Rectification D G G DS TO-220 S MOSFET Maximum Ratings TC = 25oC unless otherwise noted* Symbol VDSS VGSS ID IDM EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current Single Pulsed Avalanche Energy Avalance Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25oC) - Derate above 25oC -Continuous (TC = 85oC) - Pulsed (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) Ratings 100 20 75 300 309 75 20.8 5.6 208 1.39 -55 to +175 300 Units V V A A mJ A mJ V/ns W W/oC oC oC Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8" from Case for 5 Seconds *Drain current limited by maximum junction temperature Thermal Characteristics Symbol RJC RCS RJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Case to Sink Typ. Thermal Resistance, Junction to Ambient Ratings 0.72 0.5 62.5 oC/W Units (c)2008 Fairchild Semiconductor Corporation FDP090N10 Rev. A 1 www.fairchildsemi.com FDP090N10 N-Channel PowerTrench(R) MOSFET Package Marking and Ordering Information TC = 25oC unless otherwise noted Device Marking FDP090N10 Device FDP090N10 Package TO-220 Reel Size Tape Width Quantity 50 Electrical Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVDSS BVDSS TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Body Leakage Current ID = 250A, VGS = 0V, TC = 25oC ID = 250A, Referenced to 25oC VDS = 100V, VGS = 0V VDS = 100V, VGS = 0V, TC = 150oC VGS = 20V, VDS = 0V 100 0.1 1 500 100 V V/oC A nA On Characteristics VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250A VGS = 10V, ID = 75A VDS = 10V, ID = 37.5A (Note 4) 2.5 - 3.5 7.2 100 4.5 9 - V m S Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25V, VGS = 0V f = 1MHz 6185 585 235 8225 775 355 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg(tot) Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge at 10V Gate to Source Gate Charge Gate to Drain "Miller" Charge VDS = 50V, ID = 75A VGS = 10V (Note 4, 5) VDD = 50V, ID = 75A VGS = 10V, RGEN = 25 (Note 4, 5) 107 322 166 149 89 37 22 224 655 342 309 116 - ns ns ns ns nC nC nC - Drain-Source Diode Characteristics IS ISM VSD trr Qrr Maximum Continuous Drain to Source Diode Forward Current Maximum Pulsed Drain to Source Diode Forward Current Drain to Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, ISD = 75A VGS = 0V, ISD = 75A dIF/dt = 100A/s (Note 4) - 73 166 75 300 1.25 - A A V ns nC Notes: 1: Repetitive Rating: Pulse width limited by maximum junction temperature 2: L = 0.11mH, IAS = 75A, VDD = 50V, RG = 25, Starting TJ = 25C 3: ISD 75A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4: Pulse Test: Pulse width 300s, Duty Cycle 2% 5: Essentially Independent of Operating Temperature Typical Characteristics FDP090N10 Rev. A 2 www.fairchildsemi.com FDP090N10 N-Channel PowerTrench(R) MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics 500 VGS = 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V Figure 2. Transfer Characteristics 500 ID,Drain Current[A] ID,Drain Current[A] 100 150 C -55 C 25 C o o o 100 10 *Notes: 1. VDS = 20V 2. 250s Pulse Test *Notes: 1. 250s Pulse Test 10 70.2 2. TC = 25 C o 2 5 1 VDS,Drain-Source Voltage[V] 4 5 6 7 VGS,Gate-Source Voltage[V] 8 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 0.020 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 500 RDS(ON) [], Drain-Source On-Resistance 0.015 IS, Reverse Drain Current [A] 100 150 C 25 C o o 0.010 VGS = 10V VGS = 20V 0.005 10 *Notes: 1. VGS = 0V 0.000 0 *Note: TC = 25 C o 100 200 300 ID, Drain Current [A] 400 3 0.0 2. 250s Pulse Test 0.5 1.0 VSD, Body Diode Forward Voltage [V] 1.5 Figure 5. Capacitance Characteristics 9000 7500 Capacitances [pF] 6000 4500 Coss *Note: 1. VGS = 0V 2. f = 1MHz Ciss Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Figure 6. Gate Charge Characteristics 10 VGS, Gate-Source Voltage [V] VDS = 25V VDS = 50V VDS = 80V 8 6 4 3000 1500 0 0.1 Crss 2 *Note: ID = 75A 0 1 10 VDS, Drain-Source Voltage [V] 30 0 20 40 60 80 Qg, Total Gate Charge [nC] 100 FDP090N10 Rev. A 3 www.fairchildsemi.com FDP090N10 N-Channel PowerTrench(R) MOSFET Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs. Temperature 1.2 Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(on), [Normalized] Drain-Source On-Resistance 2.5 2.0 1.5 1.0 0.5 0.0 -100 *Notes: 1. VGS = 10V 2. ID = 75A BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.1 1.0 0.9 *Notes: 1. VGS = 0V 2. ID = 250A 0.8 -100 -50 0 50 100 150 o TJ, Junction Temperature [ C] 200 -50 0 50 100 150 o TJ, Junction Temperature [ C] 200 Figure 9. Maximum Safe Operating Area 500 20s Figure 10. Maximum Drain Current vs. Case Temperature 120 100 ID, Drain Current [A] 80 60 Limited by package ID, Drain Current [A] 100 100s 1ms 10 Operation in This Area is Limited by R DS(on) 10ms DC 40 20 0 25 1 *Notes: 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse o o 0.1 1 10 100 VDS, Drain-Source Voltage [V] 200 50 75 100 125 o TC, Case Temperature [ C] 150 Figure 11. Transient Thermal Response Curve 1 Thermal Response [ZJC] 0.5 0.2 0.1 0.1 0.05 0.02 0.01 PDM t1 t2 0.01 Single pulse *Notes: 1. ZJC(t) = 0.72 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZJC(t) o 0.001 -5 10 10 -4 10 10 10 Rectangular Pulse Duration [sec] -3 -2 -1 10 0 10 1 FDP090N10 Rev. A 4 www.fairchildsemi.com FDP090N10 N-Channel PowerTrench(R) MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FDP090N10 Rev. A 5 www.fairchildsemi.com FDP090N10 N-Channel PowerTrench(R) MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG Same Type as DUT VDD VGS * dv/dt controlled by RG * ISD controlled by pulse period VGS ( Driver ) Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) IRM di/dt Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop FDP090N10 Rev. A 6 www.fairchildsemi.com FDP090N10 N-Channel PowerTrench(R) MOSFET Mechanical Dimensions TO-220 FDP090N10 Rev. A 7 www.fairchildsemi.com TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. ACEx(R) Build it NowTM CorePLUSTM CROSSVOLTTM CTLTM Current Transfer LogicTM EcoSPARK(R) EZSWITCHTM * TM (R) Fairchild(R) Fairchild Semiconductor(R) FACT Quiet SeriesTM FACT(R) FAST(R) FastvCoreTM FlashWriter(R) * FPSTM FRFET(R) Global Power ResourceSM Green FPSTM Green FPSTM e-SeriesTM GTOTM i-LoTM IntelliMAXTM ISOPLANARTM MegaBuckTM MICROCOUPLERTM MicroFETTM MicroPakTM MillerDriveTM Motion-SPMTM OPTOLOGIC(R) OPTOPLANAR(R) (R) PDP-SPMTM Power220(R) POWEREDGE(R) Power-SPMTM PowerTrench(R) Programmable Active DroopTM QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM SMART STARTTM SPM(R) STEALTHTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SupreMOSTM SyncFETTM (R) The Power Franchise(R) TinyBoostTM TinyBuckTM TinyLogic(R) TINYOPTOTM TinyPowerTM TinyPWMTM TinyWireTM SerDesTM UHC(R) Ultra FRFETTM UniFETTM VCXTM * EZSWITCHTM and FlashWriter(R) are trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only. Rev. I33 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production (c) 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com |
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